Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the p...

Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates.

GaAs nanowires (NWs) have been extensively explored for next generation electronics, photonics and photovoltaics due to their direct bandgap and excellent carrier mobility. Typically, these NWs are grown epitaxially on crystalline substrates, which could limit potential applications requiring high growth yield to be printable or transferable on amorphous and flexible substrates. Here, utilizing...

MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates

Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.

We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor deposition with Au as catalyst. These nanowires with uniform diameters are self-aligned in <110> direction in the plane of (100). The dependence of planar nanowire morphology and growth rate as a function of growth temperature provides insights i...